Influence of density on N-H bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H
Influence of density on N-H bond stretch vibration in plasma enhanced chemical vapor deposited SiNx:H
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DOI：
10.1063/1.3281249
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发表时间：
2010-01-04
影响因子：
4
通讯作者：
Pourtois, G.
中科院分区：
文献类型：
--
作者：
Dekkers, H. F. W.;Srinivasan, Nagendra Babu;Pourtois, G.
氢化氮化硅 (SiNx:H) 薄膜的红外吸收提供了有关薄膜中共价键平均构型的信息。在等离子体增强化学气相沉积 SiNx:H 中，随着薄膜密度的增加，N - H 键的吸收光谱显示出系统偏移和向低频拖尾。 N - H 振动的第一性原理计算表明，当 H 位点与第二个相邻 N 原子微弱相互作用时，非谐性程度会增加。这种相互作用在密度较高的薄膜中变得更加明显，从而使振动谱向下移动。
The infrared absorption of hydrogenated silicon nitride (SiNx:H) films provides information about the average configuration of covalent bonds in the film. In plasma enhanced chemical vapor deposited SiNx:H, the absorption spectrum of the N - H bonds shows both a systematic shift and a tailing toward lower frequency with the increase in the film density. First-principles computations of N - H vibrations show an increased degree of anharmonicity when the H site is weakly interacting with a second neighboring N atom. This interaction becomes more pronounced in films with higher density, which consequently shifts the vibrational spectrum down.