Effect of different electrolytes on porous GaN using photo-electrochemical etching
Effect of different electrolytes on porous GaN using photo-electrochemical etching
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DOI：
10.1016/j.apsusc.2011.02.031
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发表时间：
2011-03-01
影响因子：
6.7
通讯作者：
Ali, N. K.
中科院分区：
文献类型：
--
作者：
Al-Heuseen, K.;Hashim, M. R.;Ali, N. K.
本文报道了四种不同电解液在光电化学刻蚀过程中GaN的性质和行为。扫描电子显微镜(SEM)图像显示，孔隙率强烈依赖于电解液，并且对刻蚀样品的表面形貌有很大的影响。观察到多孔GaN样品的光致发光(PL)谱的峰值强度增强，并且与电解液有很强的依赖关系。样品间的峰位相差不大，说明孔隙率的变化对发光峰的移动影响不大，但对峰强度的影响很大。在四种不同溶液中，多孔GaN的拉曼光谱表现为声子模E-2(高)、A(1)(LO)、A(1)(TO)和E-2(低)。所有样品的E-2(高)都有红移，表明多孔GaN表面的应力相对于下面的单晶外延GaN有松弛。在H_2SO_4：H_2O_2和KOH中腐蚀的样品的拉曼光谱和荧光强度较高，然后在HF：HNO_3和HF：C_2H_5OH中腐蚀的样品具有较高的拉曼光谱和荧光强度。(C)2011爱思唯尔B.V.保留所有权利。
This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E-2 (high), A(1) (LO), A(1) (TO) and E-2 (low). There was a red shift in E-2 (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H2SO4:H2O2 and KOH followed by the samples etched in HF:HNO3 and in HF:C2H5OH. (C) 2011 Elsevier B. V. All rights reserved.