A 17.3-mW 0.46-mm2 26/28/39GHz Phased-Array Receiver Front-End with an I/Q-Current-Shared Active Phase Shifter for 5G User Equipment
A 17.3-mW 0.46-mm2 26/28/39GHz Phased-Array Receiver Front-End with an I/Q-Current-Shared Active Phase Shifter for 5G User Equipment
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适用于 5G 用户设备的 17.3mW 0.46mm2 26/28/39GHz 相控阵接收器前端，具有 I/Q 电流共享有源移相器
DOI：
10.1109/rfic51843.2021.9490463
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
T. Cho
中科院分区：
文献类型：
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作者：
Xiaohua Yu;Ajaypat Jain;Amitoj Singh;Omar Elsayed;Chechun Kuo;Hariharan Nagarajan;Daeyoung Yoon;V. Bhagavatula;I. S. Lu;S. Son;T. Cho
本文提出了一种26/28/39GHz毫米波相控阵接收机前端（RXFE），其输出端包含两个并联路径。每个路径由一个T/R开关，一个大动态范围低噪声放大器（LNA）和一个I/ q电流共享有源移相器组成。RXFE在26/28GHz频段和39GHz频段的最小NF值分别为4.3dB/5.6dB，最大IP1dB为0dBm/-1.3dBm，最佳EVM值分别为- 33.1dB/-29.6dB，功耗为17.3mW，电源为1.1V。该芯片采用28nm CMOS FD-SOI工艺制造，RXFE每通道面积为0.46mm2。
This paper presents a 26/28/39GHz millimeter-wave phased-array receiver front-end (RXFE) including two parallel paths combined at the output. Each path consists of a T/R switch, a large dynamic range low noise amplifier (LNA), and an I/Q-current-shared active phase shifter. The RXFE achieves minimum NF of 4.3dB/5.6dB, maximum IP1dB of 0dBm/-1.3dBm, and best EVM of −33.1dB/-29.6dB for 26/28GHz band and 39GHz band, respectively, while consuming power of 17.3mW with 1.1V supply. The chip was fabricated in 28nm CMOS FD-SOI process and the RXFE occupied an area of 0.46mm2 per channel.