Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
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DOI：
10.1063/1.3100206
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发表时间：
2009-04-01
影响因子：
3.2
通讯作者：
Belyaev, A. E.
中科院分区：
文献类型：
--
作者：
Kurakin, A. M.;Vitusevich, S. A.;Belyaev, A. E.
我们报告的直接测量和理论研究的结果，在二维电子气的名义上未掺杂的AlGaN/GaN异质结构的平面内的有效质量具有不同程度的量子限制。结果表明，在大多数情况下，导带非抛物线效应被高估，电子波函数穿透势垒层应予以考虑。波函数杂化的贡献被确定为发挥主导作用。推导出带边有效质量值为（0.2 ± 0.01）m（0）。(C)2009年美国物理学会。[DOI：10.1063/1.3100206]
We report the results of direct measurements and a theoretical investigation of the in-plane effective mass in the two-dimensional electron gas of nominally undoped AlGaN/GaN heterostructures with a different degree of quantum confinement. It is shown that in most cases the conduction band nonparabolicity effect is overestimated and the electron wave-function penetration into the barrier layer should be taken into account. The contribution of the wave-function hybridization is determined to play the dominant role. The band edge effective mass value is deduced to be (0.2 +/- 0.01)m(0). (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3100206]