GaAs and InAs Nanowires for Ballistic Transport
GaAs and InAs Nanowires for Ballistic Transport
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用于弹道传输的 GaAs 和 InAs 纳米线
DOI：
10.1109/jstqe.2010.2053920
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发表时间：
2011
影响因子：
4.9
通讯作者：
P. Kacman
中科院分区：
文献类型：
--
作者：
H. Shtrikman;R. Popovitz‐Biro;A. Kretinin;P. Kacman
本文讨论了GaAs和InAs纳米线（NW）的剪裁，以适合于弹道输运测量。用于避免最有害的传输性能的缺陷的方法进行了说明。我们考虑的缺陷，这经常发生在III-V纳米线：偶尔堆垛层错，无意的杂质（如金原子来源于催化剂的气-液-固生长方法）和缺陷与NW侧刻面。最重要的是获得GaAs和InAs纳米线，其中实施纯纤锌矿结构或纯锌锌矿结构，即，克服了两种结构在III-V NW中混合的固有趋势。接下来是消除或至少最小化掺入的杂质的数量。在InAs纳米线中，这是通过使用低生长温度结合低生长速率来实现的。最后，将纳米线嵌入原位生长的壳层中，为表面态的钝化和保持电子远离粘附在表面上的任何杂质提供了一种稳健的方法。
Tailoring of GaAs and InAs nanowires (NWs) to be suited for measurements of ballistic transport is discussed in this paper. Methods used to avoid imperfections most harmful for the transport properties are described. We consider the imperfections, which frequently occur in III-V NWs: occasional stacking faults, unintentional impurities (like gold atoms originating from the catalyst in the vapor-liquid-solid growth method) and imperfections associated with the NW side facets. Foremost important is obtaining GaAs and InAs NWs, in which either a pure wurtzite or pure zinc-blende structure is enforced, i.e., overcoming the inherent tendency of the two structures to intermix in III-V NWs. Next follows elimination, or at least minimization of the number of incorporated impurities. In InAs NWs, this has been achieved by using low-growth temperature combined with a low-growth rate. Finally, embedding the NWs in an in situ grown shell has provided a robust way for passivation of the surface states and keeping the electrons away from any impurities adhered to the surface.
影响因子：
38.3
作者：
Allen, Jonathan E.;Hemesath, Eric R.;Lauhon, Lincoln J.
通讯作者：
Lauhon, Lincoln J.