Defects Introduced Into Electroplated Cu Films During Room-Temperature Recrystallization Probed by a Monoenergetic Positron Beam

Defects Introduced Into Electroplated Cu Films During Room-Temperature Recrystallization Probed by a Monoenergetic Positron Beam
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单能正电子束探测室温再结晶过程中电镀铜膜中引入的缺陷

DOI:
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发表时间:
2005
期刊:
J.Appl.Phys. 98
影响因子:
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通讯作者:
A.Uedono et al.
A.Uedono et al.
中科院分区:
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文献类型:
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作者:
X.Li;L.Wang;T.Onda;T.Akao;M.Hayakawa;上殿明良ほか;上殿明良ほか;K.Yamabe et al.;A.Uedono et al.;A.Uedono et al.;A.Uedono et al.;A.Uedono et al.;A.Uedono et al.;K.Yamabe et al.;A.Uedono et al.;A.Uedono et al.;A.Uedono et al.;A.Uedono et al.;A.Uedono et al.;A.Uedono et al.

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