Selective wet etching of a GaAs/AlxGa1-xAs heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1-xAs/InyGa1-y heterojunction field effect transistor fabrication
Selective wet etching of a GaAs/AlxGa1-xAs heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1-xAs/InyGa1-y heterojunction field effect transistor fabrication
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DOI：
10.1016/0921-5107(95)01414-4
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发表时间：
1995-12-01
期刊：
影响因子：
--
通讯作者：
Leong, YC
中科院分区：
文献类型：
--
作者：
Lee, HJ;Tse, MS;Leong, YC
研究了在x=0.15、x=0.2和x=0.3的柠檬酸-过氧化氢溶液中，GaAs/Al-xGa1-xAs1-x体系的选择性湿法刻蚀特性。柠檬酸(质量分数为50%)-H_2O_2溶液的比例为4：1比更常用的NH_4OH-H_2O_2溶液是一种更好的选择性腐蚀剂。当x=0.3时，选择性大于110。介绍了一种简单可靠的选择性湿法腐蚀液，并将其应用于赝形GaAs/AlxGa1-xAs/InyGa1-YAs异质结保持效应晶体管的栅凹槽刻蚀。
The selective wet etching characteristics of GaAs/Al-x Ga1-xAs1-x systems in citric acid-hydrogen peroxide solution have been studied for x = 0.15, x = 0.2 and x = 0.3 respectively. A 4:1 ratio of citric acid (50% by weight)-H2O2 solution was found to be a better selective etchant than the more commonly used NH4OH-H2O2 solutions. The selectivity obtained was more than 110 for x = 0.3. The simple and reliable selective wet etchant was applied to the gate recess etching in the fabrication of pseudomorphic GaAs/AlxGa1-xAs/InyGa1-yAs heterojunction held effect transistors.