Nanoscale effects in focused ion beam processing
Nanoscale effects in focused ion beam processing
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DOI：
10.1007/s00339-002-1943-1
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发表时间：
2003-05-01
影响因子：
2.7
通讯作者：
Ryssel, H
中科院分区：
文献类型：
--
作者：
Frey, L;Lehrer, C;Ryssel, H
直径为 8 至 50 nm 的聚焦离子束用于纳米级材料加工。在本文中，研究了离子束-固体相互作用对离子束溅射以及化学辅助材料沉积和蚀刻形成小结构的影响。在减小特征尺寸的情况下，角度相关溅射、非恒定溅射速率和散射离子起着重要作用。讨论了对侧壁角度、纵横比和蚀刻结构底部形状的影响。在梁尾区域，这些效应将尤其明显，导致材料膨胀而不是材料去除。离子束辅助蚀刻和沉积将面临额外的影响。对于小型结构，气体耗尽成为一个显着的缺点。讨论了对气体消耗的影响以及与溅射的竞争。
Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam-solid interaction determining the formation of small structures by ion-beam sputtering and chemically assisted material deposition and etching are investigated. In the case of decreasing feature size, angle-dependent sputtering, a non-constant sputter rate, and scattered ions play an important role. The impact on side-wall angle, aspect ratio, and shape of the bottom of the etched structures is discussed. In beam tail regions, these effects will be especially pronounced, leading to material swelling instead of material removal. Ion beam assisted etching and deposition will face additional effects. For small structures, gas depletion becomes a significant drawback. The impact on gas depletion and the competition with sputtering are discussed.