SPATIAL DISTRIBUTION OF DEFECTS IN ION BOMBARDED SILICON AND GERMANIUM.
SPATIAL DISTRIBUTION OF DEFECTS IN ION BOMBARDED SILICON AND GERMANIUM.
复制标题
离子轰击硅和锗中缺陷的空间分布。
DOI：
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发表时间：
1971
期刊：
影响因子：
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通讯作者：
I. Stensgaard
中科院分区：
文献类型：
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作者：
E. Boegh;P. Hoegild;I. Stensgaard
摘要 采用沟道技术测量了10-400 keV重离子轰击对Si和Ge产生的损伤。通过优化实验条件，可以在 50–10000 A 范围内以 ∼ 10% 的深度分辨率测量损伤的深度分布。本文对这些测量中使用的方法和设备进行了简短描述。测量结果可概括如下：（i）测量的深度分布表明有必要考虑反冲力从其原点传输的能量。 (ii) 平均损伤深度和深度离散与最近固体中离子沉积能量分布的理论计算一致。 (iii) 损伤产生表现出表明室温退火的剂量率依赖性。 0.5 MeV He 轰击的退火效应的观察结果支持了这一点。 (iv) 重离子的通道对......
Abstract The damage produced in Si and Ge by 10–400 keV heavy-ion bombardment has been measured by using the channeling technique. By optimizing the experimental conditions, the depth distribution of the damage can be measured with a depth resolution of ∼ 10% in the range of 50–10000 A. The present paper gives a short description of the method and the apparatus applied in these measurements. The results of the measurements may be summarized as follows: (i) The measured depth distributions demonstrate the necessity of taking the energy transported by recoils away from their point of origin into account. (ii) The average damage depth and the depth straggling agree with recent theoretical calculations of the distribution of energy deposited by ions in solids. (iii) The damage production exhibits a dose rate dependence indicative of room temperature annealing. This is supported by the observation of the annealing effect of a 0.5 MeV He bombardment. (iv) Channeling of a heavy ion has a marked influence on the ...