How boron nitride forms a regular nanomesh on Rh(111).
How boron nitride forms a regular nanomesh on Rh(111).
复制标题
DOI：
10.1103/physrevlett.104.096102
复制
发表时间：
2010-03
影响因子：
8.6
通讯作者：
G. Dong;E. Fourré;F. Tabak;J. Frenken
中科院分区：
文献类型：
--
作者：
G. Dong;E. Fourré;F. Tabak;J. Frenken
氮化硼在各种金属表面上形成几乎完全规则的薄膜，厚度仅为一个原子。在这里，我们遵循的Rh（111）与扫描隧道显微镜（STM）在现实的生长条件下，高达1200 K的氮化硼层的形成。我们的STM电影详细演示了结构如何生长以及缺陷如何引入。基于这些观察，我们得出了高质量覆盖层的最佳配方。
Boron nitride forms nearly perfectly regular films with a thickness of precisely one atom on various metal surfaces. Here, we follow the formation of boron nitride layers on Rh(111) with scanning tunneling microscopy (STM) under realistic growth conditions, up to 1200 K. Our STM movies demonstrate in detail how the structure grows and how defects are introduced. Based on these observations we arrive at the optimal recipe for a high-quality overlayer.