Growth and optical characterization of InAsN quantum dots
Growth and optical characterization of InAsN quantum dots
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InAsN 量子点的生长和光学表征
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
K. Onabe
中科院分区：
文献类型：
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作者：
Hideyo Tsurusawa;A. Nishikawa;R. Katayama;K. Onabe
采用射频等离子体辅助分子束外延（RF-MBE）技术在GaAs（001）衬底上生长了自组装InAsN量子点（QDs）。InAsN QD的直径通常为30-70 nm，高度为3-7 nm。对应于3.0-4.0 ML标称厚度的焊剂的点密度为3.6 × 109-2.3 × 1010 cm-2。随着标称厚度的增加，网点密度增加，而直径减小。量子点样品的低温（10 K）光致发光（PL）显示出1.2-1.6 μm波长范围内的发射光谱，这显然是由量子点中的N掺入（0.8-2.0%）引起的。量子点尺寸分布导致宽的发射光谱。（© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Self‐assembled InAsN quantum dots (QDs) have been grown by rf‐plasma‐assisted molecular beam epitaxy (RF‐MBE) on GaAs(001) substrates via a 2‐monolayer (ML)‐thick InAs wetting layer. The InAsN QDs are typically 30–70 nm in diameter and 3–7 nm in height. The dot density was 3.6 × 109–2.3 × 1010 cm–2 for the fluxes corresponding to the nominal thicknesses of 3.0–4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low‐temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2–1.6 μm apparently caused by the N incorporation (0.8–2.0%) into the QDs. The QD size distribution causes broad emission spectra. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)