Poly(3,3‴-didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes
Poly(3,3‴-didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes
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具有单壁碳纳米管源极和漏极的聚（3,3‴-二十二烷基四噻吩）场效应晶体管
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
Yiliang Wu
中科院分区：
文献类型：
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作者：
Yuanyuan Zhang;Yumeng Shi;Fuming Chen;S. Mhaisalkar;Lain‐Jong Li;B. Ong;Yiliang Wu
提出了一种采用单壁碳纳米管（SWCNT）作为底部接触源/漏电极的溶液加工方法，以显着降低基于聚（3,3‴-二十二烷基四噻吩）的有机场效应晶体管（OFET）的接触电阻。与具有金源/漏电极的类似器件相比，在 SWCNT 接触的 OFET 中观察到接触电阻降低了两个数量级，场效应迁移率提高了三倍。根据开尔文探针测量，这种改进归因于空穴注入有机半导体的肖特基势垒的减少。
A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly(3,3‴-didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.