Transverse-momentum selection rules for ballistic electrons at epitaxial metal/GaAs(001) interfaces
Transverse-momentum selection rules for ballistic electrons at epitaxial metal/GaAs(001) interfaces
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外延金属/GaAs(001)界面弹道电子的横向动量选择规则
DOI：
10.1103/physrevb.81.085319
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发表时间：
2010
影响因子：
3.7
通讯作者：
G. Jézéquel
中科院分区：
文献类型：
--
作者：
S. Guézo;P. Turban;S. Matteo;P. Schieffer;S. D. Gall;B. Lépine;C. Lallaizon;G. Jézéquel
本文报道了高质量Au（110）/GaAs（001）和Fe（001）/GaAs（001）肖特基接触的弹道电子发射谱。对于Au（110）/GaAs（001）界面，在GaAs导带的L谷有强的电子注入，这是其弹道电流的特征。Fe（001）/GaAs（001）界面没有这种显著的光谱特征。这些意见解释了在两个金属层中的不同的电子结构，假设在金属/半导体外延界面的电子横向动量守恒。相反，这种比较研究表明，该技术可用于分析在金属薄膜中传播的局部电子态。
We report on ballistic electron-emission spectroscopy on high-quality Au(110)/GaAs(001) and Fe(001)/GaAs(001) Schottky contacts. For the Au(110)/GaAs(001) interface, the ballistic current is characterized by a strong electron injection in the L valley of the GaAs conduction band. This remarkable spectroscopic feature is absent for the Fe(001)/GaAs(001) interface. These observations are explained by the different electronic structures in the two metal layers, assuming conservation of the electron transverse momentum at the metal/semiconductor epitaxial interfaces. Conversely, this comparative study suggests that the technique can be used for the analysis of local electronic states propagating in the metal films.