High-Performance Split-Gate-Enhanced UMOSFET With Dual Channels
High-Performance Split-Gate-Enhanced UMOSFET With Dual Channels
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DOI：
10.1109/ted.2017.2665589
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发表时间：
2017-04
影响因子：
3.1
通讯作者：
Ying Wang;Chenghao Yu;Mengqing Li;Fei Cao;Yan-juan Liu
中科院分区：
文献类型：
--
作者：
Ying Wang;Chenghao Yu;Mengqing Li;Fei Cao;Yan-juan Liu
本文提出了一种优化的双通道分栅增强型沟槽MOSFET （DSGE-UMOS）。利用二维器件模拟器ATLAS对该结构的特性进行了研究。与传统的SGE-UMOS相比，优化后的器件在120 V击穿电压下的比导通电阻（${R}_{{\ mathm {\scriptscriptstyle ON}}}\text {-sp}}$）显著降低，这是由于采用了额外的p型井区。此外，该结构还可以提高单事件烧毁（SEB）的生存能力。在DSGE-UMOS的基础上，研究了硬化DSGE-UMOS（在外延层和衬底层之间增加n型缓冲层）对SEB性能的改善作用。
This paper presents an optimized split-gate-enhanced trench MOSFET with dual channels (DSGE-UMOS). The 2-D device simulator ATLAS is used to investigate the characteristics of the proposed structure. When compared with the conventional SGE-UMOS, the optimized device shows a significant reduction in the specific on-resistance ( ${R}_{ {\mathrm{\scriptscriptstyle ON}}\text {-sp}}$ ) at a breakdown voltage of 120 V, which is due to the adoption of an additional p-type well region. Furthermore, the proposed structure can also enhance the single-event burnout (SEB) survivability. Based on the DSGE-UMOS, the hardened DSGE-UMOS (an n-type buffer layer is added between the epitaxial layer and substrate layer) is also investigated that the addition of the buffer layer can improve the SEB performance a lot.