LETTER TO THE EDITOR: The de Haas van Alphen effect and the Fermi surface in CePt3Si and LaPt3Si
LETTER TO THE EDITOR: The de Haas van Alphen effect and the Fermi surface in CePt3Si and LaPt3Si
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致编辑的信：CePt3Si 和 LaPt3Si 中的德哈斯范阿尔芬效应和费米面
DOI：
10.1088/0953-8984/16/23/l02
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
Y. Ōnuki
中科院分区：
文献类型：
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作者：
S. Hashimoto;T. Yasuda;T. Kubo;H. Shishido;T. Ueda;R. Settai;T. Matsuda;Y. Haga;H. Harima;Y. Ōnuki
我们已经进行了德哈斯？最近发现的CePt 3Si是第一个在四角晶系晶体结构中没有反转对称性的重费米子超导体，它的货车Alphen（dHvA）实验，以及非4f参考化合物LaPt 3Si的dHvA实验。对于LaPt_3Si，观察到几个dHvA分支。其中，两个主要的dHvA分支的dHvA频率（回旋有效质量）为1.10？108？大江？(1.4? m0）和8.41？一百零七？大江？(1.5? m0）被发现是很好地解释从FLAPW能带计算，对应于频带64-？和63-多重连通空穴费米面。另一方面，107？Oe CePt 3Si是小的幅度，虽然相应的回旋质量为10？20个？M0非常大。
We have carried out a de Hass?van Alphen (dHvA) experiment for the recently discovered CePt3Si, which is the first heavy fermion superconductor without inversion symmetry in the tetragonal crystal structure, together with a dHvA experiment for a non-4f reference compound LaPt3Si. As for LaPt3Si, several dHvA branches were observed. Among them, the two main dHvA branches with the dHvA frequency (the cyclotron effective mass) of 1.10 ? 108?Oe?(1.4?m0) and 8.41 ? 107?Oe?(1.5?m0) were found to be well explained from the FLAPW energy band calculations, corresponding to bands 64-?and 63-multiply-connected hole Fermi surfaces, respectively. On the other hand, the dHvA frequencies of 107?Oe in CePt3Si are small in magnitude, although the corresponding cyclotron masses of 10?20?m0 are extremely large.
DOI：
10.1088/0953-8984/16/15/l01
发表时间：
2004-04
期刊：
Journal of Physics: Condensed Matter
影响因子：
--
作者：
N. Metoki;K. Kaneko;T. Matsuda;A. Galatanu;T. Takeuchi;S. Hashimoto;T. Ueda;R. Settai;Y. Ōnuki;N. Bernhoeft
通讯作者：
N. Metoki;K. Kaneko;T. Matsuda;A. Galatanu;T. Takeuchi;S. Hashimoto;T. Ueda;R. Settai;Y. Ōnuki;N. Bernhoeft