Ordering and Absolute Energies of the L6c and X6c Conduction Band Minima in GaAs
Ordering and Absolute Energies of the L6c and X6c Conduction Band Minima in GaAs
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DOI：
10.1103/physrevlett.37.766
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发表时间：
1976-09
影响因子：
8.6
通讯作者：
D. Aspnes;C. G. Olson;D. Lynch
中科院分区：
文献类型：
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作者：
D. Aspnes;C. G. Olson;D. Lynch
Ga3dV-sp3导带跃迁在20-22 ev范围内的肖特基势垒电反射光谱中的分解临界点结构直接证明了GaAs中L6C等效最小值比X6C最小值低约170±30 mev。这种顺序，与之前的实验假设相反，显然得到了先前实验的支持，实际上与这些实验一致，并为GaAs的许多以前令人困惑的特征提供了自然的解释。
Resolved critical point structures in Schottky-barrier electroreflectance spectra of Ga3dV-sp3 conduction band transitions in the 20-22-eV range provide a direct proof that the L6C equivalent minima lie approximately 170±30 meVbelow the X6C minima in GaAs. This ordering, opposite to that assumed and apparently supported by previous experiments, is in fact consistent with these experiments and provides natural explanations for many formerly puzzling features of GaAs.