Increase in Tc and Change of Crystal Structure by High-Pressure Annealing in BiS2-Based Superconductor CeO0.3F0.7BiS2
Increase in Tc and Change of Crystal Structure by High-Pressure Annealing in BiS2-Based Superconductor CeO0.3F0.7BiS2
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BiS2基超导体CeO0.3F0.7BiS2高压退火提高Tc和晶体结构的变化
DOI：
10.1007/s10948-014-2689-7
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Yoshikazu Mizuguchi
中科院分区：
文献类型：
--
作者：
Joe Kajitani;Takafumi Hiroi;Atsushi Omachi;Osuke Miura;Yoshikazu Mizuguchi
Recently, several types of BiS2-based superconductor such as Bi4O4S3, REO1−xFxBiS2(RE: rare earth) and Sr1−xLaxFBiS2have been discovered. In this study, we have investigated the crystal structure and the superconducting properties for two kinds of polycrystalline samples (as-grown and high-pressure-annealed samples) of the BiS2-based superconductor CeO0.3F0.7BiS2. We found that both the as-grown and the high-pressure-annealed CeO0.3F0.7BiS2samples show bulk superconductivity. A higherTcwas observed in the high-pressure-annealed sample. TheTcof CeO0.3F0.7BiS2increased from2.7 K to3.7 K by high-pressure annealing. The lattice constant ofaandcaxes did not show remarkable differences between the as-grown and the high-pressure-annealed samples. Nevertheless, the peak symmetry of the (200) peak seemed to become more symmetric while the (004) peak did not show such a difference, indicating that the crystal structure within theab-plane changed to a higher-symmetric phase, a perfect tetragonal, by high-pressure annealing in CeO0.3F0.7BiS2.
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DOI：
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发表时间：
2014
期刊：
影响因子：
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