Enhanced Ferroelectric Switching Characteristics of P(VDF-TrFE) for Organic Memory Devices
Enhanced Ferroelectric Switching Characteristics of P(VDF-TrFE) for Organic Memory Devices
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DOI：
10.1021/jp105249f
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发表时间：
2010-10-28
影响因子：
3.3
通讯作者：
Lee, Pooi See
中科院分区：
文献类型：
--
作者：
Kusuma, Damar Yoga;Nguyen, Chien Anh;Lee, Pooi See
在接下来的工作中，我们报道了一种通过与合成的金纳米颗粒混合来缩短P（VDF-TrFE）薄膜的铁电开关时间的方法。铁电磁滞测量给出8 μ C/cm（2）和50 MV/m的剩余极化和矫顽场，分别。一系列的电脉冲施加的铁电聚合物的表征，并评估的开关时间响应。对于与1 × 10（-6）重量%的纳米颗粒共混的聚合物膜，观察到开关时间减少了3个数量级以上。所观察到的切换增强讨论在金纳米粒子的存在下，在铁电晶体平面的改进的对齐，从而对齐的晶体平面经历一个更强的有效场相比，在原始的P（VDF-TrFE）的随机取向的平面。
In the following work, we report an approach to shorten the ferroelectric switching time of P(VDF-TrFE) film by blending with as-synthesized gold nanoparticles. Ferroelectric hysteresis measurements give remnant polarization and coercive field of 8 mu C/cm(2) and 50 MV/m, respectively. A series of electric pulses was applied for the characterization of ferroelectric polymers, and the switching time response was evaluated. More than 3 orders of magnitude reduction in switching time is observed for the polymer film blended with nanoparticles of the amount 1 x 10(-6) wt %. The observed switching enhancements are discussed in terms of improved alignment of the ferroelectric crystal plane in the presence of the gold nanoparticles, whereby the aligned crystal planes experience a stronger effective field compared to the randomly oriented planes in pristine P(VDF-TrFE).