Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering
Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering
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DOI：
10.1063/1.2749728
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发表时间：
2007-06-18
影响因子：
4
通讯作者：
Dlott, Dana D.
中科院分区：
文献类型：
--
作者：
Letcher, Jeffrey J.;Kang, Kwangu;Dlott, Dana D.
本文用亚皮秒泵浦-探测的时间分辨拉曼散射方法研究了硅中元素激发非平衡布居的弛豫时间T-1。非相干反斯托克斯拉曼散射被用来监测非平衡态空穴布居数的衰减以及带心纵光学（LO）声子的产生和衰减。在较低水平的激光激发下，空穴和LO声子的T-1寿命分别小于0.2 ps和大于1.6 ps。在较高的激光强度下，空穴的寿命增加，LO声子的寿命朝向类似于0.4 ps的共同值T-1减小。(c)2007年，美国物理学会。
The relaxation times T-1 of nonequilibrium populations of elementary excitations in Si are studied by time-resolved Raman scattering using a subpicosecond pump-probe method. Incoherent anti-Stokes Raman scattering is used to monitor the decay of the nonequilibrium populations of holes and the generation and decay of zone-center longitudinal optical (LO) phonons. At lower levels of laser excitation, hole and LO phonon T-1 lifetimes are less than 0.2 ps and greater than 1.6 ps, respectively. At higher laser intensities, the lifetime of holes increases and the lifetime of LO phonons decrease toward a common value of T-1 similar to 0.4 ps. (c) 2007 American Institute of Physics.