Optical Switch-On of Silicon Carbide Thyristor
Optical Switch-On of Silicon Carbide Thyristor
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DOI：
10.4028/www.scientific.net/msf.433-436.851
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发表时间：
2002-06
期刊：
影响因子：
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通讯作者：
M. Levinshtein;P. Ivanov;A. Agarwal;J. Palmour
中科院分区：
文献类型：
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作者：
M. Levinshtein;P. Ivanov;A. Agarwal;J. Palmour
首次演示了碳化硅晶闸管的光导通。2.6kV的4 H-SiC晶闸管可以由波长λ =337 nm的紫外激光的光脉冲导通。导通晶闸管所需的光脉冲的阈值能量是J/sub th/ /spl_sim/ 0.75 /spl_mu/J。在J /spl_sim/ 15 /spl_mu/J的光脉冲能量下，晶闸管在其整个区域上非常快速且均匀地导通。
Optical switch-on of a silicon carbide thyristor has been demonstrated for the first time. A 2.6 kV 4H-SiC thyristor can be turned on by the light pulse of an ultraviolet laser with wavelength /spl lambda/=337 nm. The threshold energy of the light pulse, required to turn the thyristor on, is J/sub th/ /spl sime/ 0.75 /spl mu/J. At light pulse energy of J /spl sim/ 15 /spl mu/J the thyristor is turned on extremely fast and uniformly over its full area.