Highly Moisture-Resistive SiNx Films Prepared by Catalytic Chemical Vapor Deposition
Highly Moisture-Resistive SiNx Films Prepared by Catalytic Chemical Vapor Deposition
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催化化学气相沉积法制备高阻湿SiNx薄膜
DOI：
10.1143/jjap.43.l1362
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发表时间：
2004
影响因子：
1.5
通讯作者：
H. Matsumura
中科院分区：
文献类型：
--
作者：
A. Heya;Toshikazu Niki;Y. Yonezawa;T. Minamikawa;Susumu Muroi;A. Izumi;A. Masuda;H. Umemoto;H. Matsumura
使用SiH 4/NH3气体混合物，通过催化化学气相沉积（Cat-CVD）在约150°C下在Si和聚（对苯二甲酸乙二醇酯）（PET）衬底上制备氮化硅（SiNx）膜。水蒸气透过率低至0.2 g/m2天和O2气体的透过率为0.6 cm 3/m2天的化学计量的Si 3 N4膜的厚度为77 nm。虽然这些传输率依赖于N/Si比，没有观察到光学吸收下，优选的沉积条件。
Silicon nitride (SiNx) films on Si and poly(ethylene terephthalate) (PET) substrates were prepared at approximately 150°C by catalytic chemical vapor deposition (Cat-CVD), using a SiH4/NH3 gas mixture. A water vapor transmission rate as low as 0.2 g/m2day and an O2 gas transmission rate of 0.6 cm3/m2day were achieved for a stoichiometric Si3N4 film of 77 nm thickness. Although these transmission rates depended on N/Si ratio, no optical absorption was observed under preferable deposition conditions.