The Impact of Nongray Thermal Transport on the Temperature of AlGaN/GaN HFETs
The Impact of Nongray Thermal Transport on the Temperature of AlGaN/GaN HFETs
复制标题
非灰度热传输对 AlGaN/GaN HFET 温度的影响
DOI：
--
复制
发表时间：
2015
影响因子：
3.1
通讯作者：
S. Graham
中科院分区：
文献类型：
--
作者：
Nazli Donmezer;Munmun Islam;P. Yoder;S. Graham
AlGaN/GaN 异质结构 FET 中的热点温度因其对这些器件可靠性的影响而备受关注。纳米级传热效应和从电子到晶格的复杂能量传递机制都是影响热点温度的因素，而连续介质级热模拟并未考虑这一点。对于在固定功率但不同偏置条件下运行的器件，使用电学和非灰弹道扩散热传输模拟分析了发热区尺寸和从电子到晶格的能量传递机制对热点温度的影响。结果表明，热点温度受到纳米级效应的影响，但由于声子群内能量的散射和重新分布，从电子到晶格的复杂能量散射机制对热点温度没有显着影响。
The hotspot temperature in AlGaN/GaN heterostructure FETs has been of great interest due to its effect on the reliability of these devices. Both the nanoscale heat transfer effects and complex energy transfer mechanism from electrons to lattice are factors affecting the hotspot temperature, which is not accounted for in continuum level thermal simulations. The effects of heat generation zone size and the energy transfer mechanism from electrons to the lattice on the hotspot temperature were analyzed using electrical and nongray ballistic-diffusive thermal transport simulations for devices operated at a fixed power, but different biasing conditions. Results show that hotspot temperatures are impacted from nanoscale effects but the complex energy scattering mechanisms from electrons to the lattice do not have a significant impact on the hotspot temperature due to the scattering and redistribution of the energy within the phonon population.