An over 200-W output power GaN HEMT push-pull amplifier with high reliability
An over 200-W output power GaN HEMT push-pull amplifier with high reliability
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输出功率超过 200W 的高可靠性 GaN HEMT 推挽放大器
DOI：
10.1109/mwsym.2004.1338818
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
K. Joshin
中科院分区：
文献类型：
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作者：
T. Kikkawa;T. Maniwa;H. Hayashi;M. Kanamura;S. Yokokawa;M. Nishi;N. Adachi;M. Yokoyama;Y. Tateno;K. Joshin
我们描述了一种在 50V 漏极偏置电压下运行的最先进的 250W 输出功率 AlGaN/GaN HEMT 推挽发射放大器。我们还首次证明了在 60V 漏极偏置电压下 1000 小时的射频应力测试下的稳定运行。该放大器与数字预失真 (DPD) 系统相结合，对于漏极电源电压为 50 V 的 1 载波 W-CDMA 信号，还实现了小于 -50 dBc 的相邻信道泄漏功率比 (ACLR)。我们首次证明 AlGaN/GaN HEMT 推挽放大器可以满足 W-CDMA 系统的要求。
We describe a state-of-the-art 250-W output power AlGaN/GaN HEMT push-pull transmitter amplifier operated at a drain bias voltage of 50 V. We also demonstrated stable operation under RF stress testing for 1000 h at a drain bias voltage of 60 V, for the first time. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 1-carrier W-CDMA signals with a drain supply voltage of 50 V. We show, for the first time, that an AlGaN/GaN HEMTs push-pull amplifier can fulfill the requirements of W-CDMA systems.