Stability of Steady State Solutions for an Isentropic Hydrodynamic Model of Semiconductors of Two Species
Stability of Steady State Solutions for an Isentropic Hydrodynamic Model of Semiconductors of Two Species
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DOI：
10.1006/jdeq.2000.3799
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发表时间：
2000-09
影响因子：
2.4
通讯作者：
Chen Zhu;H. Hattori
中科院分区：
文献类型：
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作者：
Chen Zhu;H. Hattori
摘要 我们讨论了两种半导体等熵流体动力学模型稳态解的稳定性。我们不仅考虑电子的质量和动量方程，还考虑空穴的这两个方程。电子和空穴之间的复合效应也被考虑在内。我们研究了掺杂分布接近于零并且取决于空间变量 x 的情况。我们将证明稳态解是渐近稳定的。
Abstract We discuss the stability of the steady state solutions for an isentropic hydrodynamic model of semiconductors of two species. We consider not only the mass and momentum equations for electrons, but also those two equations for holes. The recombination effects between electrons and holes are taken into consideration as well. We study the case where the doping profile is close to zero and depends on the spacial variable x . We shall show that steady state solutions are asymptotically stable.