Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories
Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories
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DOI：
10.1088/1674-4926/31/5/056002
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发表时间：
2010-05
影响因子：
5.1
通讯作者：
Su Jianxiu;Chen Xiqu;Du Jiaxi;Kang Renke
中科院分区：
文献类型：
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作者：
Su Jianxiu;Chen Xiqu;Du Jiaxi;Kang Renke
根据实验结果分析了化学机械抛光（CMP）过程中磨料的分布形式。然后从运动学和接触力学的角度分析了硅片、磨料和抛光垫之间的相互关系。根据磨料在硅片表面的轨迹长度，得到了材料去除率与抛光速度之间的关系。分析结果与实验结果雅阁。该结论为进一步理解CMP过程中硅片材料去除机理提供了理论指导。
Distribution forms of abrasives in the chemical mechanical polishing (CMP) process are analyzed based on experimental results. Then the relationships between the wafer, the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics. According to the track length of abrasives on the wafer surface, the relationships between the material removal rate and the polishing velocity are obtained. The analysis results are in accord with the experimental results. The conclusion provides a theoretical guide for further understanding the material removal mechanism of wafers in CMP.