Mobility Enhancement in Solution‐Processed Transparent Conductive Oxide TFTs due to Electron Donation from Traps in High‐k Gate Dielectrics
Mobility Enhancement in Solution‐Processed Transparent Conductive Oxide TFTs due to Electron Donation from Traps in High‐k Gate Dielectrics
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DOI：
10.1002/adfm.201503940
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发表时间：
2016-02
影响因子：
19
通讯作者：
Andre Zeumault;V. Subramanian
中科院分区：
文献类型：
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作者：
Andre Zeumault;V. Subramanian
将高迁移率ZnO薄膜沉积到溶液处理的ZrO 2陶瓷上，以研究当透明导电氧化物（TCO）材料沉积到高k陶瓷上时与热生长的SiO 2相比所获得的实验场效应迁移率值之间的巨大差异。通过详细的电特性，在ZnO中的迁移率增强相关的ZrO 2中的电子陷阱的存在下，提供一个额外的电子源的ZnO。此外，由于溶液处理的高k材料一般倾向于表现出类似的行为，因此建议广泛适用于其他TCO/高k材料组合，与实验观察结果一致。
High‐mobility ZnO thin films are deposited onto solution‐processed ZrO2 dielectrics in order to investigate the large differences between experimental field‐effect mobility values obtained when transparent conductive oxide (TCO) materials are deposited onto high‐k dielectrics as opposed to thermally grown SiO2. Through detailed electrical characterization, the mobility enhancement in ZnO is correlated to the presence of electron traps in ZrO2 serving to provide an additional source of electrons to the ZnO. Furthermore, as a consequence of the general tendency for solution‐processed high‐k dielectrics to exhibit similar behavior, the broad applicability is suggested to other TCO/high‐k material combinations in agreement with experimental observations.