SrRuO_3 thin films grown on MgO substrates at different oxygen partial pressures
SrRuO_3 thin films grown on MgO substrates at different oxygen partial pressures
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DOI：
10.1557/jmr.2012.409
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发表时间：
2013-03
影响因子：
2.7
通讯作者：
B. Zou;P. Petrov;N. Alford
中科院分区：
文献类型：
--
作者：
B. Zou;P. Petrov;N. Alford
A comprehensive study of SrRuO_3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO_3 films had lattice parameters matching those of bulk SrRuO_3 material and exhibited room temperature resistivity of 320 μΩ·cm. The resistivity of SrRuO_3/MgO films decreased with increasing oxygen partial pressure.
