Effect of domain and circuit properties on oscillations in GaAs
Effect of domain and circuit properties on oscillations in GaAs
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DOI：
10.1147/rd.104.0310
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发表时间：
1966-07
影响因子：
1.3
通讯作者：
J. Gunn
中科院分区：
文献类型：
--
作者：
J. Gunn
一个讨论给出的复杂性时，获得一条砷化镓，产生微波振荡，被允许与外部电路相互作用。可以预期三种非常不同的操作模式，每种模式对应于引起电流调制的电场的行进域的消光机制。可以看出，磁畴可能在（1）当它们到达条的末端时，（2）当电压对于磁畴的稳定性下降得太低时，或（3）当电压上升得太高时熄灭。在后两种情况下，外部电路起着重要作用。推导了各种模式存在的条件，并对它们的性质进行了实验研究。
A discussion is given of the complications obtaining when a bar of GaAs, generating microwave oscillations, is allowed to interact with an external circuit. Three very different modes of operation can be expected, each corresponding to a mechanism of extinction of the travelling domains of electric field that cause the current modulation. It is seen that the domains may be extinguished (1) when they reach the end of the bar, (2) when the voltage drops too low for the stability of a domain, or (3) when it rises too high. In the last two circumstances, the external circuit plays an important role. Conditions for the existence of the various modes are deduced, and their properties are studied experimentally.