Ion-Sensitive Properties of Organic Electrochemical Transistors
Ion-Sensitive Properties of Organic Electrochemical Transistors
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DOI：
10.1021/am100154e
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发表时间：
2010-06-01
影响因子：
9.5
通讯作者：
Chan, Helen L. W.
中科院分区：
文献类型：
--
作者：
Lin, Peng;Yan, Feng;Chan, Helen L. W.
首次系统地研究了基于聚（3，4-乙撑二氧噻吩）：聚（苯乙烯磺酸）（PEDOT：PSS）的有机电化学晶体管（OECT）的离子敏感特性。结果表明，随着电解液中H+、K+、Na+、Ca ~（2+）和Al ~（3+）等阳离子浓度的增加，OECT的转移曲线（I-DS-V-G）水平向低栅压方向移动。OECT的栅电极对它的离子敏感性能起着重要的作用。对于具有Ag/AgCl栅电极的器件，得到了栅电压漂移与阳离子浓度之间的能斯特关系。对于具有金属栅电极（包括Pt和Au）的器件，离子灵敏度高于由能斯特方程给出的灵敏度，这可以归因于金属栅和电解质之间的界面。
Ion-sensitive properties of organic electrochemical transistors (OECT) based on Poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid) (PEDOT:PSS) have been systematically studied for the first time. It has been found that the transfer curve (I-DS-V-G) of an OECT shifts to lower gate voltage horizontally with the increase of the concentration of cations, including H+, K+, Na+, Ca2+, and Al3+, in the electrolyte. The gate electrode of the OECT plays an important role on its ion-sensitive properties. For devices with Ag/AgCI gate electrode, Nernstian relationships between the shift of the gate voltage and the concentrations of the cations have been obtained, For devices with metal gate electrodes, including Pt and Au, the ion sensitivity is higher than that given by the Nernst equation, which can be attributed to the interface between the metal gate and the electrolyte.