Geiger-Mode Operation of Ge-on-Si Avalanche Photodiodes
Geiger-Mode Operation of Ge-on-Si Avalanche Photodiodes
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DOI：
10.1109/jqe.2011.2110637
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发表时间：
2011-04
影响因子：
2.5
通讯作者：
Zhiwen Lu;Yimin Kang;Chong Hu;Qiugui Zhou;Han-din Liu;Joe C. Campbell
中科院分区：
文献类型：
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作者：
Zhiwen Lu;Yimin Kang;Chong Hu;Qiugui Zhou;Han-din Liu;Joe C. Campbell
据报道，硅上锗分离吸收 - 电荷倍增雪崩光电二极管实现了单光子探测。其单光子探测效率达到14%，暗计数率为108 s⁻¹，时间分辨率为117 ps。
Single-photon detection is reported for Ge-on-Si separate-absorption-charge-multiplication avalanche photodiodes. Single-photon detection efficiency of 14%, dark count rate of 108 s-1, and timing resolution of 117 ps were achieved.