Origin of the fluctuations in the luminescence emission in InGaN quantum wells
Origin of the fluctuations in the luminescence emission in InGaN quantum wells
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DOI：
10.1016/j.mssp.2006.01.066
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发表时间：
2006-02-01
影响因子：
4.1
通讯作者：
Artus, L.
中科院分区：
文献类型：
--
作者：
Martinez, I.;Jimenez, J.;Artus, L.
利用光谱分辨阴极发光（CL）和透射电子显微镜（TEM）研究了金属有机气相外延生长的InGaN单量子阱。在亚微米尺度下，观察了CL辐射强度和峰值波长的空间波动。将CL数据与TEM进行的结构分析相关联表明，这种波动与穿过整个结构的螺纹位错有关，这些位错改变了In浓度，从而改变了压电场和非辐射复合效率。(c) 2006 Elsevier Ltd.版权所有。
InGaN single quantum wells grown by metal organic vapour phase epitaxy were studied by spectrally resolved cathodoluminescence (CL) and transmission electron microscopy (TEM). Spatial fluctuations of the intensity and peak wavelength At submicrometric scale in the CL emission were observed. The correlation of CL data with structural analysis carried out by TEM shows that such fluctuations are related to threading dislocations that cross the full structure and modify In concentration and thereafter the piezoelectric field and the non-radiative recombination efficiency. (c) 2006 Elsevier Ltd. All rights reserved.