Large-area microlens emitters for powerful THz emission
Large-area microlens emitters for powerful THz emission
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DOI：
10.1007/s00340-009-3609-6
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发表时间：
2009-06
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影响因子：
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通讯作者：
G. Matthäus;Stefan Nolte;Stefan Nolte;R. Hohmuth;M. Voitsch;Wolfgang Richter;B. Pradarutti;S. Riehemann;Gunther Notni;A. Tünnermann;A. Tünnermann
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文献类型：
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作者：
G. Matthäus;Stefan Nolte;Stefan Nolte;R. Hohmuth;M. Voitsch;Wolfgang Richter;B. Pradarutti;S. Riehemann;Gunther Notni;A. Tünnermann;A. Tünnermann
提出了一种基于低温生长砷化镓的微透镜耦合大面积发射极。六边形微透镜阵列引导入射泵浦光进入手指电极结构的每一秒间隙。因此，在高加速场强（50 kV/cm）下实现了单向光电流，产生了建设性的叠加太赫兹辐射。采用重复频率为80 MHz，最大平均功率约为3w的Ti:Sapphire振荡器，可实现净ir -THz转换效率高达1.3×10−4，太赫兹平均功率为280 μW。
A microlens coupled large-area emitter based on low-temperature grown GaAs is presented. A hexagonal microlens array directs the incident pump light into every second gap of a finger electrode structure. Consequently, an unidirectional photocurrent at high acceleration field strengths (50 kV/cm) is achieved, which generates constructively superposed THz emission. Using a Ti:Sapphire oscillator with a maximum average power of about 3 W at a repetition rate of 80 MHz, a net IR-to-THz conversion efficiency up to 1.3×10−4and a THz average power of 280 μW is achieved.