Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
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DOI：
10.1002/adma.201601949
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发表时间：
2016-11-16
影响因子：
29.4
通讯作者：
Kim, Gil-Ho
中科院分区：
文献类型：
--
作者：
Lee, Inyeal;Rathi, Servin;Kim, Gil-Ho
介绍了一种双极双通道场效应晶体管（FET），该晶体管具有由单独控制的单个沟道层形成的WSe2/MoS2异质结构。FET表现出可切换的双极性行为，分别在MoS2和WSe2的各个层中具有独立的载流子输运电子和空穴。此外，还研究了WSe2/MoS2双通道场效应管异质界面的光响应。
An ambipolar dual-channel field-effect transistor (FET) with a WSe2/MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2, respectively. Moreover, the photo-response is studied at the heterointerface of the WSe2/MoS2 dual-channel FET.