Low-loss 60 GHz patterned ground shield CPW transmission line
Low-loss 60 GHz patterned ground shield CPW transmission line
复制标题
低损耗 60 GHz 图案接地屏蔽 CPW 传输线
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
K. Yoshida
中科院分区：
文献类型：
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作者：
D. Mat;R. Pokharel;R. Sapawi;H. Kanaya;K. Yoshida
本文介绍了金属化面以下的慢波结构设计，以降低硅衬底的介质损耗。采用0.18µm CMOS TSMC工艺设计了三种共面波导传输线结构：屏蔽条长度(SL)=屏蔽条间距(SS)=10µm和5µm的浮动条结构和SL=SS=5µm的图形接地结构。这些结构起到了防止电场穿透硅衬底的作用。结果表明，在60 GHz频率下，花纹接地屏蔽层的衰减损耗较低，约为传统共面波导损耗的60%，品质因数提高到16.006。图案化结构的衰减损耗为0.731dB/mm。设计的波长为980µm，频率为60 GHz。
This paper describes the slow wave structure design below the metallization plane to reduce dielectric loss of the silicon substrates. Three types of structure, floating strips with shield strip length (SL) = shield strip spacing (SS)=10µm and 5µm, and patterned ground with SL=SS=5µm have been designed for coplanar waveguide (CPW) transmission line using 0.18µm CMOS TSMC technology. These structures act to prevent the penetration of the electric field into the silicon substrate. It shows that at frequency of 60GHz, patterned ground shield resulted lower attenuation loss, approximately 60% lower compare to conventional CPW with the increase of quality factor to 16.006. The patterned structure exhibit the attenuation loss of 0.731dB/mm. The wavelength of the design is 980µm at 60GHz.