Charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films
Charge issues in high oxygen gas ratio tetraethylorthosilicate plasma enhanced chemical vapor deposition films
复制标题
高氧气比原硅酸四乙酯等离子体增强化学气相沉积薄膜中的电荷问题
DOI：
10.1116/1.580376
复制
发表时间：
1996
期刊：
影响因子：
--
通讯作者：
J. Hackenberg
中科院分区：
文献类型：
--
作者：
D. Decrosta;J. Hackenberg
采用等离子体增强化学气相沉积法研究了多层二氧化硅膜对反射电荷Nss和平带电压Vfb的影响。研究的参数包括氧化膜层的厚度和类型，以及掺杂剂类型。与以较低氧气比率（1：1，氧气：TEOS）沉积的膜相比，沉积高氧气比率膜[4：1，氧气：正硅酸乙酯（TEOS）]作为多层膜的第一层导致统计上较低的Nss和平带电压Vfb的较小偏移。使用高氧气比作为初始层，多层膜沉积至18 kA的厚度。这些薄膜的Nss和Vfb值分别为1.28×1011 cm−2和−11.5 V。相比之下，具有较低氧气比初始层的那些膜显示出统计上较高的Nss和Vfb值，分别为1.70×1011 cm-2和-15.4 V。在后续层的膜组成的变化没有显示任何统计上显着的变化，either…
The effect of multilayered silicon dioxide films on reflective charge, Nss, and flatband voltage, Vfb, was investigated using plasma enhanced chemical vapor deposition. Parameters investigated included the thickness and type of oxide film layers, as well as dopant type. Deposition of a high oxygen gas ratio film [4:1, oxygen:tetraethylorthosilicate (TEOS)] as the first layer of a multilayer film resulted in a statistically lower Nss and a smaller shift in flatband voltage, Vfb, than films deposited with lower oxygen gas ratios (1:1, oxygen:TEOS). Multilayer films were deposited to a thickness of 18 kA using a high oxygen gas ratio as the initial layer. These films exhibited Nss and Vfb values of 1.28×1011 cm−2 and −11.5 V, respectively. In contrast, those films with a lower oxygen gas ratio initial layer exhibited statistically higher Nss and Vfb values of 1.70×1011 cm−2 and −15.4 V, respectively. Film compositional changes in subsequent layers did not display any statistically significant change in eithe...