Atomic-Scale Evolution of Local Electronic Structure Across Multiferroic Domain Walls
Atomic-Scale Evolution of Local Electronic Structure Across Multiferroic Domain Walls
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DOI：
10.1002/adma.201004143
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发表时间：
2011-04-05
影响因子：
29.4
通讯作者：
Chu, Ying-Hao
中科院分区：
文献类型：
--
作者：
Chiu, Ya-Ping;Chen, Yu-Ting;Chu, Ying-Hao
直接证据的电子配置跨域壁BiFeO 3的定量特征在于横截面扫描隧道显微镜。原子尺度的能带演化和不对称的内置势垒在域边界的演示。109度的畴壁记录了带隙的显著减小，这表明了将局部导电通道控制在2nm以内的新途径。
Direct evidence of the electronic configurations across domain walls in BiFeO3 is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109 degrees domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm.