Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate
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DOI：
10.1109/led.2004.841462
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发表时间：
2005-01
影响因子：
4.9
通讯作者：
Shiyang Zhu;Rui Li;S.J. Lee;M. Li;A. Du;J. Singh;Chunxiang Zhu;A. Chin;D. Kwong
中科院分区：
文献类型：
--
作者：
Shiyang Zhu;Rui Li;S.J. Lee;M. Li;A. Du;J. Singh;Chunxiang Zhu;A. Chin;D. Kwong
首次展示了采用 HfAlO 栅极电介质、HfN-TaN 金属栅极和自对准 NiGe S/D 的肖特基势垒源极/漏极 (S/D) 锗 p 沟道 MOSFET。由于 NiGe-Ge 接触的空穴肖特基势垒比 PtSi-Si 接触的空穴肖特基势垒更低，而且 Ge 沟道的迁移率比 Si 更高，因此与 PtSi S/D 的硅对应物相比，漏极驱动能力提高了 /spl sim/5 倍。
Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as /spl sim/5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.