Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates
Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates
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DOI：
10.7567/jjap.56.070306
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发表时间：
2017-07-01
影响因子：
1.5
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Fujihara, Hiroaki;Suda, Jun;Kimoto, Tsunenobu
将磷或铝离子直接注入到没有外延层的半绝缘4H-SiC衬底中，分别形成n型或p型层，掺杂浓度为10(17)至10(19)cm(-3)。这些在 1650 摄氏度退火的注入层的电性能通过在 160-900 K 温度范围内的霍尔效应测量来表征。注入掺杂剂的电激活率为 88-98%。 Al+注入层的补偿缺陷密度高于P+注入层。在所研究的掺杂范围内，注入层的迁移率大多与外延层的迁移率相当。 (C) 2017 日本应用物理学会
Phosphorus or aluminum ions were directly implanted into semi-insulating 4H-SiC substrates with no epitaxial layers to form n-or p-type layers, respectively, with doping densities in the range from 10(17) to 10(19)cm(-3). The electrical properties of these implanted layers annealed at 1650 degrees C were characterized by Hall effect measurements in the temperature range of 160-900 K. The electrical activation ratios of implanted dopants were 88-98%. The density of compensating defects was higher in Al+-implanted layers than in P+-implanted ones. The mobilities of the implanted layers were mostly comparable to those of epitaxial layers in the doping range investigated. (C) 2017 The Japan Society of Applied Physics