Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressure
Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressure
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DOI：
10.1051/jp4:2001338
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发表时间：
2001-08
期刊：
影响因子：
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通讯作者：
A. Slaoui;S. Bourdais
中科院分区：
文献类型：
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作者：
A. Slaoui;S. Bourdais
绝缘衬底硅薄膜太阳能电池（SOI）是降低成本和硅生产质量的重要选择。在常压下，以三氯硅烷为前驱气体，在灯加热辅助CVD反应器中，研究了硅在氧化铝和莫来石陶瓷上的成核和生长。分析了沉积条件和陶瓷衬底结构组成对Si层成核密度和结构质量的影响。结果与众所周知的硅在非晶衬底（如二氧化硅）上的生长机理进行了比较。在最佳条件下，可以沉积20-30μm厚的多晶硅，晶粒尺寸可达15 μm，并有取向。这些层非常适合太阳能电池的加工。
Thin-film solar cells from silicon on insulating substrates (SOI) are a serious option to reduce the cost and silicon production mass. Here we investigated nucleation and growth of silicon on alumina and mullite ceramics in a lamps-heating assisted CVD reactor working at atmospheric pressure with trichlorosilane as a precursor gas. The nucleation density and the structural quality of the deposited Si layers were analyzed as a function of the deposition conditions and the structure and composition of the ceramic substrate. The results were compared with the well-known growth mechanism of silicon on amorphous substrates like SiO 2 . Optimal conditions allowed deposition of 20-30μm thick polycrystalline silicon with grains up 15 μm in size and oriented. These layers are very suitable for solar cells processing.