Transient Measurement of GaN HEMT Drift Region Potential in the High Power State
Transient Measurement of GaN HEMT Drift Region Potential in the High Power State
复制标题
高功率状态下 GaN HEMT 漂移区电势的瞬态测量
DOI：
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发表时间：
2021
影响因子：
4.9
通讯作者：
Jongseob Kim
中科院分区：
文献类型：
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作者：
I. Hwang;S. Chong;Younghwan Park;Sun;Boram Kim;Joonyong Kim;Jae;J. H. Park;Dong;M. Yu;J. Shin;Jongseob Kim
本文报道了AlGaN/GaN高电子迁移率晶体管（HEMT）在高功率状态下开关过程中漂移区电势的瞬态测量。高功率应力的影响已经通过应力之后或在低于工作电压的电压下的高功率DC应力期间的器件表征来报告，以避免器件故障。然而，在高功率应力期间的瞬态测量是具有挑战性的，因为器件只能承受几μ s的高功率应力<inline-formula><tex-math notation="LaTeX"> ext{s}$</tex-math></inline-formula>。在这项工作中，一个测试结构与电压探针插入在栅极和漏极之间的漂移区被用来执行在工作电压的高功率状态期间的漂移区电位的实时测量。发现关态应力时在栅侧形成的高电场在几μ m内向漏侧传播<inline-formula><tex-math notation="LaTeX"> ext{s}$</tex-math></inline-formula>。这种高电场的传播速度随着漏极电压的增加而增加。有人提出，热沟道电子的陷阱是造成这种效果，和动态导通电阻测量表明，陷阱是0.44 eV以下的导带。
This work reports the transient measurement of the AlGaN/GaN high electron-mobility transistor (HEMT) drift region potential in the high power state during switching. The effect of high power stress has been reported by device characterization after stress or during high power DC stress at voltages below the operating voltages to avoid device failure. However, transient measurement during high power stress is challenging, since the device can sustain the high power stress only for a few <inline-formula> <tex-math notation="LaTeX">$mu ext{s}$ </tex-math></inline-formula> before failure occurs. In this work, a test structure with voltage probe inserted in the drift region between the gate and the drain is used to perform real-time measurement of the drift region potential during the high power state at operating voltages. It is found that the high electric field formed at the gate side during the off-state stress propagates towards the drain side within a few <inline-formula> <tex-math notation="LaTeX">$mu ext{s}$ </tex-math></inline-formula>. The propagation speed of this high electric field increased with increase in drain voltage. It is proposed that trapping of hot channel electrons is causing this effect, and dynamic on-resistance measurement suggests that the traps are 0.44 eV below the conduction band.