Plasma particulate contamination control. II. Self‐cleaning tool design
Plasma particulate contamination control. II. Self‐cleaning tool design
复制标题
自清洁工具设计。
DOI：
10.1116/1.578201
复制
发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Edward F. Patterson
中科院分区：
文献类型：
--
作者：
G. Selwyn;Edward F. Patterson
在实验室和制造工具的蚀刻、溅射和沉积等离子体中，宏观颗粒的浓度经常远远超过环境洁净室条件和可接受的工艺规范。控制颗粒污染是现代生产线的一个重要目标。控制等离子体产生的颗粒尤其重要，因为这些工具和工艺是晶片污染的主要来源。等离子体粒子通过电子附着获得负电荷，并受到电场和等离子体不均匀性的影响。不适当的工具设计会将颗粒困在晶片或其他敏感表面附近，从而加剧工具污染问题。相反，适当的工具和电极设计可以极大地改善污染结果。首次提出了自清洁等离子工具的概念，以及这种方法在实验室和制造研究中的有效性和有用性的证据。该方法不会降低系统的工作效率。
Macroscopic particles are often observed in etching, sputtering, and deposition plasmas, in laboratory and manufacturing tools, in concentrations far exceeding ambient cleanroom conditions and acceptable process specifications. Controlling particle contamination is an important goal in modern fabrication lines. Controlling plasma‐generated particulates is especially important as these tools and processes are a major source of wafer contamination. Plasma particles acquire negative charge by electron attachment and are influenced by electric fields and plasma inhomogeneities. Improper tool design exacerbates tool contamination problems by trapping particles near wafers or other sensitive surfaces. Conversely, proper tool and electrode design can provide greatly improved contamination results. The concept of a self‐cleaning plasma tool is presented for the first time, along with evidence of the effectiveness and usefulness of this approach in laboratory and manufacturing studies. The method does not reduce t...