Quasi-atomic layer etching of silicon nitride
Quasi-atomic layer etching of silicon nitride
复制标题
氮化硅的准原子层蚀刻
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
A. Ranjan
中科院分区：
文献类型：
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作者：
Sonam Sherpa;A. Ranjan
原子层刻蚀(ALE)是一种很有前途的技术，它可以解决与连续或脉冲等离子体工艺相关的挑战-选择性、轮廓和长宽比相关的刻蚀之间的权衡。与硅、氧化物等材料相比，氮化硅的原子层刻蚀还没有广泛的报道。在本文中，作者证明了氮化硅在商业等离子体刻蚀室中的自限刻蚀。本文所讨论的工艺包括两个顺序步骤--在氢等离子体中进行表面改性，然后在氟化等离子体中去除改性层。除了ALE的特性外，作者还证明了该过程是各向异性的，对氧化物的选择性为>；100。尽管不能达到每循环一个单分子层的饱和刻蚀速率，但氮化硅的自限刻蚀仍然使我们能够结合原子层刻蚀的优点，如没有等密度偏置和极高的刻蚀速率.
Atomic layer etching (ALE) is a promising technique that can solve the challenges associated with continuous or pulsed plasma processes—trade-offs between selectivity, profile, and aspect ratio dependent etching. Compared to silicon, oxide, and other materials, atomic layer etching of silicon nitride has not been extensively reported. In this paper, the authors demonstrate the self-limited etching of silicon nitride in a commercial plasma etch chamber. The process discussed in this paper consists of two sequential steps—surface modification in hydrogen plasma followed by the removal of modified layers in fluorinated plasma. In addition to the ALE characteristics, the authors also demonstrate that the process is anisotropic and the selectivity to oxide is >100. Although the saturated etch rate of one monolayer per cycle could not be attained, self-limited etching of silicon nitride still enables us to incorporate the benefits of atomic layer etching such as an absence of isodense bias and an extremely high...