Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN
Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN
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Eu 注入、Mg 掺杂 HVPE GaN 发射光谱的温度相关滞后
DOI：
10.1063/1.4848286
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发表时间：
2013
影响因子：
3.7
通讯作者：
M. Boćkowski
中科院分区：
文献类型：
--
作者：
K. O'Donnell;R. Martin;P. Edwards;K. Lorenz;E. Alves;M. Boćkowski
在高温高压（高达 1400 °C，1 GPa）下退火以消除晶格损伤的样品中，通过注入 Eu 的 Mg 掺杂 GaN 的光致发光 (PL) 光谱观察到红色发射位点（以下简称 Eu0），其主 5D0 至 7F2 峰位于 619 nm。 PL 光谱在室温和 ~20 K 之间具有强烈的温度滞后性：低于 30 K，光致变色切换发生在 Eu0 和通常占主导地位的 Eu1 中心之间；加热样品后，Eu0 信号直到温度达到~150 K 才会恢复。Eu1 的光漂白发生在冷却后的低温下，而 Eu0 的光增强发生在重新加热后的高温下。这些观察结果表明 p 型 GaN:Eu, Mg 中电荷驱动缺陷互变的微观模型。
A red emission site (hereafter, Eu0), with its main 5D0 to 7F2 peak at 619 nm, is observed by photoluminescence (PL) spectroscopy of Eu-implanted, Mg-doped GaN, in samples annealed at high temperature and pressure (up to 1400 °C, 1 GPa) in order to remove lattice damage. The PL spectrum is strongly temperature-hysteretic between room temperature and ∼20 K: below 30 K, photochromic switching occurs between Eu0 and the usually dominant Eu1 center; upon warming the sample, the Eu0 signal does not recover until the temperature reaches ∼150 K. Photobleaching of Eu1 takes place at low temperatures after cooling, while photo-enhancement of Eu0 takes place at high temperatures after re-warming. These observations suggest a microscopic model of charge-driven defect interconversion in p-type GaN:Eu, Mg.