Dose rate dependence and time constant of the ion‐beam‐induced crystallization mechanism in silicon
Dose rate dependence and time constant of the ion‐beam‐induced crystallization mechanism in silicon
复制标题
硅中离子束诱导结晶机制的剂量率依赖性和时间常数
DOI：
10.1063/1.339027
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发表时间：
1987
影响因子：
3.2
通讯作者：
G. Holmén
中科院分区：
文献类型：
--
作者：
J. Linnros;G. Holmén
研究了剂量率对硅中非晶层离子束诱导结晶的影响。非晶层是通过自离子注入在体硅和蓝宝石上的硅中产生的。随后的再结晶是在 200 至 400°C 下由 300 keV 能量的 Ne、Si、Ar 和 Kr 离子束穿过非晶层引起的。卢瑟福背向散射/沟道测量表明，再生长率随着剂量率的增加而降低。这种行为对于重离子来说更为明显，其中高剂量率和/或低温可以逆转再结晶并诱导层的进一步非晶生长。在这种新的固相生长机制中，非晶/晶体界面以类似于外延过程的方式向内移动到晶体中。间歇束实验得出离子束诱导结晶机制的时间常数约为 0.3 秒。不同离子的时间常数和比例定律支持......
The influence of dose rate on the ion‐beam‐induced crystallization of amorphous layers in silicon has been investigated. The amorphous layers were produced by self‐ion implantation both in bulk silicon and in silicon on sapphire. Subsequent recrystallization was induced at 200 to 400 °C by Ne, Si, Ar, and Kr ion beams of 300 keV energy passing through the amorphous layers. Rutherford backscattering/channeling measurements showed that the regrowth rate decreased with increasing dose rate. This behavior was more pronounced for heavy ions where high dose rates and/or low temperatures could reverse the recrystallization and induce further amorphous growth of the layer. In this new solid‐phase growth regime, the amorphous/crystalline interface moved inwards into the crystal in a manner similar to an epitaxial process. An intermittent beam experiment yielded a time constant for the ion beam induced crystallization mechanism of the order of 0.3 s. The time constant and a scaling law for different ions support a ...