A novel method for preparing α-In2Te3 polycrystalline thin films
A novel method for preparing α-In2Te3 polycrystalline thin films
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DOI：
10.1016/s0254-0584(99)00143-1
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发表时间：
1999-11
影响因子：
4.6
通讯作者：
M. Emziane;J. Bernède;J. Ouerfelli;H. Essaidi;A. Barreau
中科院分区：
文献类型：
--
作者：
M. Emziane;J. Bernède;J. Ouerfelli;H. Essaidi;A. Barreau
Indium telluride In2Te3polycrystalline thin films of different thicknesses were prepared using sequential thermal evaporation of In and Te layers on glass and SnO2coated glass substrates held at room temperature. The post-deposition annealing was performed in an argon or a nitrogen atmosphere at different temperatures and for several durations. The influence of the annealing conditions on the film structure was investigated. The characterization of the films was made by X-ray diffraction, electron microprobe analysis, X-ray photoelectron spectroscopy, scanning electron microscopy, Raman scattering and optical transmission. We show that annealing at a temperature of 663K for 30min leads to monophased and homogeneous α-In2Te3thin films.
