High yield GaAs flip-chip MMICs lead to low cost T/R modules
High yield GaAs flip-chip MMICs lead to low cost T/R modules
复制标题
高产量 GaAs 倒装芯片 MMIC 可实现低成本 T/R 模块
DOI：
10.1109/mwsym.1994.335112
复制
发表时间：
1994
期刊：
影响因子：
--
通讯作者：
L. Felton
中科院分区：
文献类型：
--
作者：
L. Felton
一种倒装芯片设计和组装技术已经被开发出来，用于砷化镓MMIC，从而降低制造成本和提高模块成品率。MMIC表面的电镀凸块被用来替代线键合，以互连所有DC和RF信号。消除了晶片减薄、背面刻蚀和背面电镀步骤，从而实现了更高的制造成品率和更高的组装成品率。微带匹配网络已经被共面波导和螺旋电感等单面传输结构所取代。射频数据将显示，以验证设计和组装方法。结果表明，与未倒装的MMIC相比，倒装的高功率MMIC提供了更低的热阻，从而降低了结温并提高了可靠性。
A flip-chip design and assembly technique has been developed for GaAs MMICs resulting in lower fabrication costs and improved module yields. Plated bumps on the face of the MMIC are used as a replacement for wirebonds to interconnect all DC and RF signals. Wafer thinning, backside via etch, and backside plating steps have been eliminated, resulting in both higher fabrication yields and improved assembly yields. Microstrip matching networks have been replaced with uniplanar transmission structures such as Coplanar Waveguide (CPW) and spiral inductors. RF data will be shown to validate the design and assembly methods. Results will be shown indicating that flipped high-power MMICs provide lower thermal resistances than their unflipped counterparts, resulting in lower junction temperatures and improved reliability.<<ETX>>