Ultralow-threshold thin-film lithium niobate optical parametric oscillator
Ultralow-threshold thin-film lithium niobate optical parametric oscillator
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DOI：
10.1364/optica.418984
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发表时间：
2021-04-20
期刊：
影响因子：
10.4
通讯作者：
Tang, Hong X.
中科院分区：
文献类型：
--
作者：
Lu, Juanjuan;Al Sayem, Ayed;Tang, Hong X.
具有强二阶（CHI（（2）））光学非线性的材料，尤其是Niobate锂，在构建光学参数振荡器（OPOS）方面起着至关重要的作用。然而，低损失chi（（2））材料的芯片尺度整合仍然具有挑战性，并限制了片上CHI（（（2））OPO的阈值。这里我们报告了使用准阶段匹配的高质量微孔谐振器的电信波长处的芯片锂硅锂光学参数振荡器，其阈值功率（类似于30 MU W）的阈值比以前的CHI低400倍（（（（（ 2））集成光子平台。从泵到信号的芯片电源转换效率为11％，并以93 MU W的泵功率获得惰轮。通过改变泵频率和芯片温度，可以实现OPO波长调整。到目前为止，所有片段中的功率阈值最低，与包括高转换效率，准阶段匹配的灵活性以及设备可伸缩性在内的优势一样，薄膜锂niobate opo为基于芯片可调的新机会打开了新的机会和量子光源，并为实现光子神经网络提供了潜在的平台。 （c）2021美国光学学会根据OSA开放访问发布协议条款
Materials with strong second-order (chi((2))) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss chi((2)) materials remains challenging and limits the threshold power of on-chip chi((2)) OPO. Herewe report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power (similar to 30 mu W) is 400 times lower than that in previous chi((2)) integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 mu W. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chipOPOs demonstrated so far, aswell as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement