Effective kinetic variations with stress duration for multilayered metallizations

Effective kinetic variations with stress duration for multilayered metallizations
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多层金属化的有效动力学随应力持续时间的变化

DOI:
10.1109/relphy.1988.23447
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发表时间:
1988
期刊:
26th Annual Proceedings Reliability Physics Symposium 1988
影响因子:
--
通讯作者:
J. McPherson
J. McPherson
中科院分区:
--
文献类型:
--
作者:
J. Ondrusek;A. Nishimura;H. Hoang;T. Sugiura;R. Blumenthal;H. Kitagawa;J. McPherson

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研究了Ti:W/Al-1%Si双层金属化和Ti/W/Al-1%Si三层金属化的电迁移行为。研究了电磁损伤引起的电阻变化对激活能和电磁性能的影响。在应力作用下,有效激活能随测试结构阻力的增大而单调减小。电阻温度系数支持Al-Si层中的空穴形成模型作为Ti:W/Al-Si多层膜的电阻升高机制。提出了计入阻力上升的布莱克方程的经验形式。
Electromigration (EM) in Ti:W/Al-1%Si two-layered and Ti/W/Al-1%Si three-layered metallizations was investigated. The activation energy and the EM performance were studied as functions of the change in resistance which results from EM damage. The effective activation energy was found to decrease monotonically with increasing test structure resistance under stress. The temperature coefficient of resistance supports a void formation model in the Al-Si layer as the resistance rise mechanism for the Ti:W/Al-Si multilayered film. An empirical form of the Black equation which incorporates resistance rise is proposed.<<ETX>>