Ultra‐Thin Poly‐Si Layers: Passivation Quality, Utilization of Charge Carriers Generated in the Poly‐Si and Application on Screen‐Printed Double‐Side Contacted Polycrystalline Si on Oxide Cells
Ultra‐Thin Poly‐Si Layers: Passivation Quality, Utilization of Charge Carriers Generated in the Poly‐Si and Application on Screen‐Printed Double‐Side Contacted Polycrystalline Si on Oxide Cells
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超薄多晶硅层:钝化质量、多晶硅中产生的电荷载流子的利用以及氧化物电池上丝网印刷双面接触多晶硅的应用
DOI:
10.1002/solr.202000177
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发表时间:
2020
期刊:
影响因子:
--
通讯作者:
R. Peibst
中科院分区:
文献类型:
--
作者:
Y. Larionova;H. Schulte‐Huxel;B. Min;S. Schäfer;T. Kluge;H. Mehlich;R. Brendel;R. Peibst
Herein, the various measures to improve the efficiency of large‐area screen‐printed double‐side contacted polycrystalline Si on oxide (POLO)‐cells are experimentally demonstrated. The short‐circuit current densityJscincreases by 0.6 mA cm−2upon reducing the thickness of poly‐Si from 25 to 10 nm due to the reduction of the parasitic absorption in the poly‐Si layer at the textured front side of the cell. Additionally, it is shown for the first time that the minority carriers generated by light absorbed in the poly‐Si layer can at least partially be transferred into the crystalline Si base. Remarkably high implied open‐circuit voltageVoc,implvalues are achieved with n‐type cell precursors by introducing an hydrogenation step by AlxOyafter reducing the poly‐Si thickness, and by an additional annealing step after sputtering of transparent conductive oxides (TCOs). All cell precursors showVoc,implvalues of up to 740 mV independent of the poly‐Si thickness. A reduction in the open‐circuit voltageVocis observed during back‐end processing to 728 mV as measured on the final cells. A certified cell energy conversion efficiency of 22.3% is reported.
影响因子:
56.7
作者:
Yoshikawa, Kunta;Kawasaki, Hayato;Yamamoto, Kenji
通讯作者:
Yamamoto, Kenji