Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
复制标题
盖电极对Hf0.5Zr0.5O2薄膜铁电性能的影响
DOI：
10.1109/led.2018.2846570
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发表时间：
2018-08-01
影响因子：
4.9
通讯作者：
Liu, Ming
中科院分区：
文献类型：
--
作者：
Cao, Rongrong;Wang, Yan;Liu, Ming
本文系统地研究了顶部电极（TEs）对Hf-0.5 Zr-0.5 O-2 （HZO）薄膜铁电性能的影响。随着热膨胀系数（α）的降低，te的改变增加了HZO薄膜的残余极化（P-r）。α = 4.5 × 10(-6)/K的W TE的2P(r)值最大，为38.72亩C/cm(2), α = 14.2 × 10(-6)/K的Au TE的2P(r)值仅为22.83亩C/cm(2)。同时，矫顽力场（E-c）沿电场轴发生偏移，偏移量与TE和TiN底电极（be）的功函数（WFs）差有关。当TE的wf （Pt、Pd、Au/W、Al、Ta）大于/小于TiN BE时，E-c向负/正方向偏移。这封信提供了一种有效的方法来调制基于hfo2的器件性能，以满足实际应用中的不同要求。
In this letter, effects of top electrodes (TEs) on ferroelectric properties of Hf-0.5 Zr-0.5 O-2 (HZO) thin films are examined systematically. The remnant polarization (P-r) of HZO thin films increases by altering TEs with lower thermal expansions coefficient (alpha). The largest 2P(r) value of 38.72 mu C/cm(2) is observed for W TE with alpha = 4.5 x 10(-6)/K, while the 2P(r) value is only 22.83 mu C/cm(2) for Au TE with alpha = 14.2x10(-6)/K. Meanwhile, coercivefield (E-c) shifts along the electric field axis and the offset is found to be dependent on the difference of workfunctions (WFs) between TE and TiN bottom electrode (BE). E-c shifts toward negative/positive direction, when theWF of TE is larger/smaller (Pt, Pd, Au/W, Al, Ta) than TiN BE. This letter provides an effective way to modulate HfO2-based device performance for different requirements in actual application.